Datasheet4U Logo Datasheet4U.com

VG36646141BT-7 - CMOS Synchronous Dynamic RAM

Description

The device is CMOS Synchronous Dynamic RAM organized as 1,048,576 - word x 16-bit x 4-bank.

it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only power supply.

Features

  • Single 3.3V ( ± 0.3V ) power supply.
  • High speed clock cycle time : 8/10ns.
  • Fully synchronous with all signals referenced to a positive clock edge.
  • Programmable CAS Iatency (2,3).
  • Programmable burst length (1,2,4,8,&Full page).
  • Programmable wrap sequence (Sequential/Interleave).
  • Automatic precharge and controlled precharge.
  • Auto refresh and self refresh modes.
  • Quad Internal banks controlled by A12 & A13 (Bank select.

📥 Download Datasheet

Datasheet preview – VG36646141BT-7

Datasheet Details

Part number VG36646141BT-7
Manufacturer Vanguard International Semiconductor
File Size 974.34 KB
Description CMOS Synchronous Dynamic RAM
Datasheet download datasheet VG36646141BT-7 Datasheet
Additional preview pages of the VG36646141BT-7 datasheet.

📁 Similar Datasheet

  • VG3617161BT - 16Mb CMOS Synchronous Dynamic RAM (ETC)
  • VG380SA - VERTICAL GYRO SYSTEM (ACEINNA)
  • VG380ZA - VERTICAL GYROSCOPE (ACEINNA)
Other Datasheets by Vanguard International Semiconductor

Full PDF Text Transcription

Click to expand full text
VIS Description Preliminary VG36641641BT CMOS Synchronous Dynamic RAM The device is CMOS Synchronous Dynamic RAM organized as 1,048,576 - word x 16-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only power supply. It is packaged in JEDEC standard pinout and standard plastic TSOP package. Features • Single 3.3V ( ± 0.
Published: |