VS6606GS Description
Features Enhancement mode Low on-resistance RDS(on) @ VGS=4.5 V VitoMOS® Ⅱ Technology 100% Avalanche test Pb-free lead plating; Symbol Parameter VS6606GS 60V/18A N-Channel Advanced Power MOSFET Condition Min. Forward on voltage Reverse Recovery Time Reverse Recovery Charge ISD=12A,VGS=0V Tj=25℃,Isd=12A, VGS=0V di/dt=100A/μs -- 0.8 1.2 V -- 36 -- ns -- 22 -- nC ① Repetitive rating;.
VS6606GS Key Features
- Enhancement mode
- Low on-resistance RDS(on) @ VGS=4.5 V
- VitoMOS® Ⅱ Technology
- 100% Avalanche test
- Pb-free lead plating; RoHS pliant
- APR, 2020