VS6606GS Datasheet | Vanguard Semiconductor

Features - Enhancement mode - Low on-resistance RDS(on) @ VGS=4.5 V - Vito MOS® Ⅱ Technology - 100% Avalanche test - Pb-free lead plating; Ro HS pliant 60V/18A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5 V ID 5.5 mΩ 8.0 mΩ SOP8 Part ID VS6606GS Package Type SOP8 Marking 6606GS Tape and reel information 3000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Gate-Source voltage Diode continuous forward current Continuous drain current @VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② Maximum power dissipation TSTG , TJ Storage and junction temperature range Thermal Characteristics Symbol Parameter TA =25°C TA =25°C TA =70°C TA =25°C TA =25°C RθJL R JA Thermal Resistance, Junction-to-Lead Thermal Resistance, Junction-to-Ambient...