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Vanguard Semiconductor

VS6614GS Datasheet Preview

VS6614GS Datasheet

N-Channel Advanced Power MOSFET

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Features
Enhancement mode
Low on-resistance RDS(on) @ VGS=4.5 V
VitoMOS® Technology
100% Avalanche test
Pb-free lead plating; RoHS compliant
VS6614GS
60V/13A N-Channel Advanced Power MOSFET
V DS
R @ DS(on),TYP VGS=10 V
R @ DS(on),TYP VGS=4.5 V
ID
60
V
10.5 mΩ
17 mΩ
13
A
SOP8
Part ID
VS6614GS
Package Type
SOP8
Marking
6614GS
Tape and reel
information
3000PCS/Reel
Maximum ratings, at TA =25°C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
VGS
IS
Drain-Source breakdown voltage
Gate-Source voltage
Diode continuous forward current
ID
Continuous drain current @VGS=10V
IDM
Pulse drain current tested
EAS
Avalanche energy, single pulsed
PD
Maximum power dissipation
TSTG , TJ
Storage and junction temperature range
Thermal Characteristics
Symbol
Parameter
TA =25°C
TA =25°C
TA =70°C
TA =25°C
TA =25°C
RθJL
Rθ JA
Thermal Resistance, Junction-to-Lead
Thermal Resistance, Junction-to-Ambient
Rating
60
±20
2.6
13
10
52
16
3.1
-55 to 150
Typical
24
40
Unit
V
V
A
A
A
A
mJ
W
°C
Unit
°C/W
°C/W
CopyrightVanguard Semiconductor Co., Ltd
Rev D – FEB, 2020
www.vgsemi.com




Vanguard Semiconductor

VS6614GS Datasheet Preview

VS6614GS Datasheet

N-Channel Advanced Power MOSFET

No Preview Available !

Electrical Characteristics
Symbol
Parameter
VS6614GS
60V/13A N-Channel Advanced Power MOSFET
Condition
Min. Typ. Max. Unit
Static Electrical Characteristics @ Tj=25°C (unless otherwise stated)
V(BR)DSS Drain-Source Breakdown Voltage
VGS=0V, ID=250μA
60
--
--
V
IDSS
Zero Gate Voltage Drain Current( Tj =25) VDS=60V,VGS=0V
--
--
1
uA
Zero Gate Voltage Drain Current( Tj =125) VDS=60V,VGS=0V
--
--
100
uA
IGSS
Gate-Body Leakage Current
VGS=±20V,VDS=0V
--
--
±100
nA
VGS(TH)
Gate Threshold Voltage
VDS=VGS,ID=250μA 1.55
1.8
2.5
V
RDS(ON) Drain-Source On-State Resistance
VGS=10V, ID=10A
--
10.5
13
Tj =100
--
15
--
RDS(ON)
Drain-Source On-State Resistance
VGS=4.5V, ID=8A
--
17
24
Dynamic Electrical Characteristics @ Tj = 25°C (unless otherwise stated)
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
Qg (10V) Total Gate Charge
Qg (4.5V) Total Gate Charge
Q gs
Gate-Source Charge
Q gd
Gate-Drain Charge
Switching Characteristics
660 780 900
pF
VDS=30V,VGS=0V,
320 375 430
pF
f=1MHz
1
10
20
pF
f=1MHz
--
1.3
--
Ω
9
13
17
nC
VDS=30V,ID=10A,
4.4
6.3
8.2
nC
VGS=10V
1.8
2.5
3.3
nC
1.4
2
2.6
nC
t d(on)
tr
t d(off)
tf
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD=30V,
ID=10A,
RG=3.0Ω,
VGS=10V
--
6
--
ns
--
15
--
ns
--
13
--
ns
--
3.4
--
ns
Source- Drain Diode Characteristics@ Tj = 25°C (unless otherwise stated)
VSD
t rr
Q rr
NOTE:
Forward on voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD=10A,VGS=0V
Tj=25,Isd=10A,
VGS=0V
di/dt=100A/μs
--
0.8
1.2
V
--
20
--
ns
--
7.9
--
nC
Repetitive rating; pulse width limited by max junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.5mH, RG = 25Ω, IAS = 8A, VGS =10V. Part not recommended for use above this value
Pulse width ≤ 380μs; duty cycle≤ 2%.
CopyrightVanguard Semiconductor Co., Ltd
Rev D – FEB, 2020
www.vgsemi.com


Part Number VS6614GS
Description N-Channel Advanced Power MOSFET
Maker Vanguard Semiconductor
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VS6614GS Datasheet PDF






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