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Vishay Intertechnology Electronic Components Datasheet

IRF510 Datasheet

Power MOSFET

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www.vishay.com
IRF510, SiHF510
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg max. (nC)
Qgs (nC)
Qgd (nC)
Configuration
100
VGS = 10 V
8.3
2.3
3.8
Single
0.54
TO-220AB
D
S
D
G
G
S
N-Channel MOSFET
FEATURES
• Dynamic dV/dt rating
• Repetitive avalanche rated
Available
• 175 °C operating temperature
• Fast switching
Available
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
ORDERING INFORMATION INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220AB
IRF510PbF
SiHF510-E3
IRF510
SiHF510
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current a
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energy b
Repetitive Avalanche Current a
Repetitive Avalanche Energy a
Maximum Power Dissipation
Peak Diode Recovery dV/dt c
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) d
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 4.8 mH, Rg = 25 , IAS = 5.6 A (see fig. 12).
c. ISD 5.6 A, dI/dt 75 A/μs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
LIMIT
100
± 20
5.6
4.0
20
0.29
75
5.6
4.3
43
5.5
-55 to +175
300
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
S15-2693-Rev. C, 16-Nov-15
1
Document Number: 91015
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

IRF510 Datasheet

Power MOSFET

No Preview Available !

www.vishay.com
IRF510, SiHF510
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
RthCS
RthJC
TYP.
-
0.50
-
MAX.
62
-
3.5
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 μA
100 -
-V
VDS Temperature Coefficient
VDS/TJ
Reference to 25 °C, ID = 1 mA
- 0.12 - V/°C
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 μA
2.0 - 4.0 V
Gate-Source Leakage
IGSS
VGS = ± 20 V
- - ± 100 nA
Zero Gate Voltage Drain Current
VDS = 100 V, VGS = 0 V
- - 25
IDSS
μA
VDS = 80 V, VGS = 0 V, TJ = 150 °C - - 250
Drain-Source On-State Resistance
RDS(on)
VGS = 10 V
ID =3.4 A b
- - 0.54
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
gfs
Ciss
Coss
Crss
VDS = 50 V, ID = 3.4 A b
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
1.3 -
-S
- 180 -
- 81 - pF
- 15 -
Total Gate Charge
Qg
ID = 5.6 A, VDS = 80 V
-
- 8.3
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
LS
VGS = 10 V
VDS = 10 V,
see fig. 6 and fig. 13 b
VDD = 50 V, ID = 5.6 A
Rg = 24 , RD = 8.4, see fig. 10 b
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
S
-
-
-
-
-
-
-
-
- 2.3 nC
- 3.8
6.9 -
16 -
ns
15 -
9.4 -
4.5 -
nH
7.5 -
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
ISM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
G
S
- - 5.6
A
- - 20
Body Diode Voltage
VSD TJ = 25 °C, IS = 5.6 A, VGS = 0 V b - - 2.5 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr - 100 200 ns
TJ = 25 °C, IF = 5.6 A, dI/dt = 100 A/μs b
Qrr - 0.44 0.88 μC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
S15-2693-Rev. C, 16-Nov-15
2
Document Number: 91015
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number IRF510
Description Power MOSFET
Maker Vishay
PDF Download

IRF510 Datasheet PDF






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