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Vishay Intertechnology Electronic Components Datasheet

SIB422EDK Datasheet

N-Channel MOSFET

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New Product
N-Channel 20-V (D-S) MOSFET
SiB422EDK
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
20
RDS(on) (Ω)
0.030 at VGS = 4.5 V
0.041 at VGS = 2.5 V
0.057 at VGS = 1.8 V
0.082 at VGS = 1.5 V
PowerPAK SC-75-6L-Single
D
6
D
5
1.60 mm S
4
1
D
2
D
3
G
S
1.60 mm
ID (A)a
9
9
9
5
Qg (Typ.)
6 nC
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
SC-75 Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.75 mm Profile
• Typical ESD Protection 4000 V
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Portable Devices
Marking Code
- Load Switch
Part # code
AFX
XXX
- Battery Switch
Lot Traceability
and Date code
R
G
Ordering Information: SiB422EDK-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
S
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
http://www.DataSheet4U.net/
VDS
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Soldering Recommendations (Peak Temperature)d, e
Limit
20
±8
9a
9a
7.1b, c
5.7b, c
25
9a
2.1b, c
13
8.4
2.5b, c
1.6b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t5s
Steady State
Symbol
RthJA
RthJC
Typical
41
7.5
Maximum
51
9.5
Unit
°C/W
Notes:
a. Package limited, TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 105 °C/W.
Document Number: 65297
S09-1919-Rev. A, 28-Sep-09
www.vishay.com
1
datasheet pdf - http://www.DataSheet4U.net/


Vishay Intertechnology Electronic Components Datasheet

SIB422EDK Datasheet

N-Channel MOSFET

No Preview Available !

SiB422EDK
Vishay Siliconix
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
Total Gate Charge
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
Qg
VGS = 0 V, ID = 250 µA
ID = 250 µA
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 4.5 V
VDS = 0 V, VGS = ± 8 V
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 5 A
VGS = 2.5 V, ID = 4.3 A
VGS = 1.8 V, ID = 1.5 A
VGS = 1.5 V, ID = 1 A
VDS = 10 V, ID = 5 A
VDS = 10 V, VGS = 8 V, ID = 7.1 A
Min.
20
0.4
15
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
IS
ISM
VSD
trr
Qrr
ta
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
VDS = 10 V, VGS = 4.5 V, ID = 7.1 A
f = 1 MHz
0.46
VDD = 10 V, RL = 1.8 Ω
ID 5.7 A, VGEN = 4.5 V, Rg = 1 Ω
http://www.DataSheet4U.net/
VDD = 10 V, RL = 1.8 Ω
ID 5.7 A, VGEN = 10 V, Rg = 1 Ω
TC = 25 °C
IS = 5.7 A, VGS = 0 V
IF = 5.7 A, dI/dt = 100 A/µs, TJ = 25 °C
Typ.
18
- 2.5
0.025
0.034
0.046
0.055
28
11.5
6
0.8
1.6
2.3
0.3
0.6
3.8
1.7
0.15
0.3
5.6
1.6
0.85
15
7.5
8
15
Max.
1.0
± 1.5
± 25
1
10
0.030
0.041
0.057
0.082
18
9
4.6
0.45
0.9
6
2.6
0.25
0.45
9
2.5
9
25
1.2
30
15
Unit
V
mV/°C
V
µA
A
Ω
S
nC
kΩ
µs
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 65297
S09-1919-Rev. A, 28-Sep-09
datasheet pdf - http://www.DataSheet4U.net/


Part Number SIB422EDK
Description N-Channel MOSFET
Maker Vishay
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