Download SIHLD024 Datasheet PDF
SIHLD024 page 2
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SIHLD024 Key Features

  • Dynamic dV/dt Rating
  • For Automatic Insertion
  • End Stackable
  • Logic-Level Gate Drive
  • RDS(on) Specified at VGS = 4 V and 5 V
  • 175 °C Operating Temperature
  • Fast Switching
  • pliant to RoHS Directive 2002/95/EC

SIHLD024 Description

Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in multiple binations on standard 0.1" pin centers. The dual drain servers as a thermal link to the mounting surface for power dissipation levels up to 1.