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SIHLI530G Key Features

  • Isolated Package
  • High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available
  • Sink to Lead Creepage Dist. = 4.8 mm
  • Logic-Level Gate Drive
  • RDS(on) Specified at VGS = 4 V and 5 V
  • Fast Switching
  • Ease of paralleling
  • Lead (Pb)-free Available

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SIHLI530G Description

Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in mercial-industrial applications. The molding pound used provides a high isolation capability and a low between the tab and external heatsink.