SiHLI640G Datasheet - Vishay

ower MOSFET

SiHLI640G Features

* Isolated Package

* High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)

* Sink to Lead Creepage Dist. 4.8 mm

* Logic-Level Gate Drive

* RDS(on) Specified at VGS = 4V and 5 V

* Fast Switching

* Ease of paralleling

* Lead (Pb)-free

SiHLI640G General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The moldi.

SiHLI640G Datasheet (1.42 MB)

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Datasheet Details

Part number:

SiHLI640G

Manufacturer:

Vishay ↗

File Size:

1.42 MB

Description:

Ower mosfet.
Power MOSFET IRLI640G, SiHLI640G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 5.0.

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SiHLI640G Features

SiHLI640G General Description

Datasheet Details

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