SiHLI640G
FEATURES
- Isolated Package
- High Voltage Isolation = 2.5 k VRMS (t = 60 s; f = 60 Hz)
- Sink to Lead Creepage Dist. 4.8 mm
- Logic-Level Gate Drive
- RDS(on) Specified at VGS = 4V and 5 V
- Fast Switching
- Ease of paralleling
- Lead (Pb)-free Available
Available
Ro HS-
PLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in mercial-industrial applications. The molding pound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a...
