SIHLI520G

Power MOSFET

Vishay

SIHLI520G Features

* Isolated Package

* High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)

* Sink to Lead Creepage Distance = 4.8 mm

* Logic-Level Gate Drive

* RDS (on) Specified at VGS = 4 V and 5 V

* Fast Switching

* Ease of Paralleling

* Lead (Pb

SIHLI520G General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The moldin.

SIHLI520G Datasheet (691.82 KB)

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SIHLI520G

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Vishay ↗

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691.82 KB

Description:

Power mosfet.
Power MOSFET IRLI520G, SiHLI520G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 5 V.

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SIHLI520G Power MOSFET Vishay

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SIHLI520G Features

SIHLI520G General Description

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