Datasheet4U Logo Datasheet4U.com

SiHLI640G ower MOSFET

📥 Download Datasheet Datasheet Preview Page 1

Description

Power MOSFET IRLI640G, SiHLI640G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 5.0.
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resista.

📥 Download Datasheet

Preview of SiHLI640G PDF
datasheet Preview Page 2 datasheet Preview Page 3

Features

* Isolated Package
* High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
* Sink to Lead Creepage Dist. 4.8 mm
* Logic-Level Gate Drive
* RDS(on) Specified at VGS = 4V and 5 V
* Fast Switching
* Ease of paralleling
* Lead (Pb)-free

Applications

* The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 10

SiHLI640G Distributors

📁 Related Datasheet

SiHLIZ14G SiHL510 SiHL540 SIHLR014 SIHLU014 SIHLU024

📌 All Tags

SiHLI640G ower MOSFET Vishay
Vishay SiHLI640G-like datasheet
SIHLI520G
SIHLI530G
SIHLI540G
SIHLIZ24G
SiHLIZ34G