SiHLI640G Datasheet - Vishay

SiHLI640G, ower MOSFET

Power MOSFET IRLI640G, SiHLI640G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 5.0.
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resista.

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Datasheet Details

Part number:

SiHLI640G

Manufacturer:

Vishay ↗

File Size:

1.42 MB

Description:

ower MOSFET

Features

* Isolated Package
* High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
* Sink to Lead Creepage Dist. 4.8 mm
* Logic-Level Gate Drive
* RDS(on) Specified at VGS = 4V and 5 V
* Fast Switching
* Ease of paralleling
* Lead (Pb)-free

Applications

* The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 10

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