SiHLI640G Datasheet - Vishay

SiHLI640G ower MOSFET

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The moldi.

SiHLI640G Features

* Isolated Package

* High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)

* Sink to Lead Creepage Dist. 4.8 mm

* Logic-Level Gate Drive

* RDS(on) Specified at VGS = 4V and 5 V

* Fast Switching

* Ease of paralleling

* Lead (Pb)-free

SiHLI640G-Vishay.pdf