SiHLI640G - ower MOSFET

Vishay

SiHLI640G Datasheet Preview — Preview of SiHLI640G PDF

Datasheet Details

Part number	SiHLI640G
Manufacturer	Vishay ↗
File Size	1.42 MB
Description	ower MOSFET
Datasheet	SiHLI640G-Vishay.pdf

SiHLI640G Product details

Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Features

Isolated Package.
High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz).
Sink to Lead Creepage Dist. 4.8 mm.
Logic-Level Gate Drive.
RDS(on) Specified at VGS = 4V and 5 V.
Fast Switching.
Ease of paralleling.
Lead (Pb)-free Available Available RoHS.

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Published: Oct 9, 2018 |