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SIHLZ14L Datasheet Power MOSFET

Manufacturer: Vishay

General Description

Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient reliable device for use in a wide variety of applications.

The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4.

Overview

IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) 60 VGS = 5 V 8.4 Qgs (nC) 3.5 Qgd (nC) 6.0 Configuration Single I2PAK (TO-262) D2PAK (TO-263) 0.

Key Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • Advanced Process Technology.
  • Surface Mount (IRLZ14S, SiHLZ14S).
  • Low-Profile Through-Hole (IRLZ14L, SiHLZ14L).
  • 175 °C Operating Temperature.
  • Fast Switching.
  • Compliant to RoHS Directive 2002/95/EC.