SIS438DN
SIS438DN is N-Channel 20V MOSFET manufactured by Vishay.
FEATURES
- Trench FET® Gen III power MOSFET
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- DC/DC conversion
- POL
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free
Power PAK 1212-8 Si S438DN-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C) Pulsed drain current
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
Avalanche current Avalanche energy
L = 0.1 m H
Continuous source-drain diode current
TC = 25 °C TA = 25 °C
TC = 25 °C
Maximum power dissipation
TC = 70 °C TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
Soldering remendations (peak temperature) d, e
VDS VGS
IDM IAS EAS IS
TJ, Tstg
LIMIT
20 ± 20 16 a, g 16 g 14.3 b, c 11.3 b, c 32 g 15 11.25 16 a, g 2.9 b, c 27.7 17.7 3.5 b, c 2.2 b, c -55 to +150 260
UNIT V
A m J A W °C
THERMAL RESISTANCE...
