* TrenchFET® Gen IV power MOSFET
* Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
* 100 % Rg and UIS tested
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
* Synchronous rect
SISS28DN Datasheet (147.65 KB)
SISS28DN
147.65 KB
N-channel mosfet.
www.vishay.com SiSS28DN Vishay Siliconix N-Channel 25 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 25 RDS(on) () (MAX.) 0.00152 at VGS = 10 V 0.00224 .
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