The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
P-Channel 30-V (D-S) MOSFET
Si6443DQ
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 30 0.012 at VGS = - 10 V 0.019 at VGS = - 4.5 V
ID (A) - 8.8 - 7.0
FEATURES • Halogen-free • TrenchFET® Power MOSFET
APPLICATIONS • Battery Switch • Load Switch
RoHS
COMPLIANT
S*
TSSOP-8
D1 S2 S3 G4
Si6443DQ
8D 7S 6S 5D
Top View Ordering Information: Si6443DQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
G * Source Pins 2, 3, 6 and 7 must be tied common.
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS - 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
- 8.8 - 7.2
- 7.3 - 5.
Si6443DQ Datasheet
