Full PDF Text Transcription for Si6459BDQ (Reference)
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P-Channel 60 V (D-S) MOSFET Si6459BDQ Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () - 60 0.115 at VGS = - 10 V 0.150 at VGS = - 4.5 V ID (A) - 2.7 - 2.4 FEATURES •...
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5 at VGS = - 10 V 0.150 at VGS = - 4.5 V ID (A) - 2.7 - 2.4 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC S* TSSOP-8 D1 S2 S3 G4 Si6459BDQ 8D 7S 6S 5D Top View Ordering Information: Si6459BDQ-T1-GE3 (Lead (Pb)-free and Halogen-free) G * Source Pins 2, 3, 6 and 7 must be tied common. D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 10 s Steady State Drain-Source Voltage VDS - 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID - 2.7 - 2.2 - 2.2 - 1.
Si6459BDQ Datasheet
