Full PDF Text Transcription for Si6991DQ (Reference)
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Si6991DQ. For precise diagrams, and layout, please refer to the original PDF.
Si6991DQ New Product Vishay Siliconix Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 D TrenchFETr Power MOSFETS ID (A) - 4.2 - 3.2 rDS(on) (W) 0.0...
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(V) - 30 D TrenchFETr Power MOSFETS ID (A) - 4.2 - 3.2 rDS(on) (W) 0.040 @ VGS = - 10 V 0.068 @ VGS = - 4.5 V APPLICATIONS D Load Switch D Battery Switch S1 S2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View Ordering Information: Si6991DQ T-1 D1 P-Channel MOSFET D2 P-Channel MOSFET D 8 D2 7 S2 6 S2 5 G2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70
Si6991DQ Datasheet
