Si8823EDB Description
() at VGS = -4.5 V RDS(on) max. () at VGS = -2.5 V RDS(on) max. () at VGS = -1.8 V RDS(on) max.
Si8823EDB Key Features
- TrenchFET® Gen III p-channel power MOSFET
- pact 0.8 mm x 0.8 mm outline area
- Low 0.4 mm max. profile
- RDS(on) rating at VGS = -1.5 V
- Typical ESD protection: 1900 V HBM
- Material categorization: for definitions of pliance