SiHL530 mosfet equivalent, power mosfet.
100 0.16
* Dynamic dV/dt Rating
* Repetitive Avalanche Rated
* Logic-Level Gate Drive
*R DS(on) Specified at VGS = 4 V and 5 V
* 175 °C Operating Tem.
are b ased on Vishay’s knowledge of typic al requirements that are ofte n placed on Vish ay products in generic applicat.
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N-Channel MOSFET
Third generation Power MOSFETs from Vishay provide the designer with the best combi nation of fast swi tching, ruggedized device design, low on -resistance a nd cost effectiveness. The TO-220AB package is univers ally .
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