SiSF20DN Overview
52 a mon - Drain FEATURES • TrenchFET® Gen IV power MOSFET • Very low source-to-source on resistance • Integrated mon-drain n-channel MOSFETs in a pact and thermally enhanced package • 100 % Rg and UIS tested • Optimizes circuit layout for bi-directional current flow • Material categorization: for definitions of pliance please see .vishay./doc?99912 APPLICATIONS • Battery protection switch • Bi-directional switch • Load switch G1 N-Channel 1 MOSFET • 24 V systems N-Channel 2 MOSFET G2 S1 S2 ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK 1212-8SCD SiSF20DN-T1-GE3
SiSF20DN Key Features
- TrenchFET® Gen IV power MOSFET
- Very low source-to-source on resistance
- Integrated mon-drain n-channel MOSFETs
- 100 % Rg and UIS tested
- Optimizes circuit layout for bi-directional current flow
- Material categorization: for definitions of pliance please see .vishay./doc?99912
SiSF20DN Applications
- Battery protection switch