* TrenchFET® Gen IV power MOSFET
* Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
* 100 % Rg and UIS tested
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
* Synchronous rect
SiSS10DN Datasheet (305.36 KB)
SiSS10DN
305.36 KB
N-channel mosfet.
www.vishay.com SiSS10DN Vishay Siliconix N-Channel 40 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) () (MAX.) 0.00265 at VGS = 10 V 0.00360 .
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