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SiSS10DN - N-Channel MOSFET

Key Features

  • TrenchFET® Gen IV power MOSFET.
  • Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SiSS10DN
Manufacturer Vishay
File Size 305.36 KB
Description N-Channel MOSFET
Datasheet download datasheet SiSS10DN Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com SiSS10DN Vishay Siliconix N-Channel 40 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) () (MAX.) 0.00265 at VGS = 10 V 0.00360 at VGS = 4.5 V ID (A) a, g 60 60 Qg (TYP.) 23 nC PowerPAK® 1212-8S D D D 6 7 5 D 8 3.3 mm 1 Top View 3.3 mm 1 4 3 S 2 S S G Bottom View Ordering Information: SiSS10DN-T1-GE3 (lead (Pb)-free and halogen-free) FEATURES • TrenchFET® Gen IV power MOSFET • Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.