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SiSS10DN - N-Channel MOSFET

SiSS10DN Description

www.vishay.com SiSS10DN Vishay Siliconix N-Channel 40 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) () (MAX.) 0.00265 at VGS = 10 V 0.00360 .

SiSS10DN Features

* TrenchFET® Gen IV power MOSFET
* Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
* 100 % Rg and UIS tested

SiSS10DN Applications

* Synchronous rectification
* High power density DC/DC
* VRMs and embedded DC/DC
* Synchronous buck converter
* Load switching
* Battery management D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBO

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Vishay SiSS10DN-like datasheet