Full PDF Text Transcription for SiZ200DT (Reference)
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www.vishay.com SiZ200DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs PowerPAIR® 3 x 3S S2 5 S2 6 S2 7 G2 8 S(P1/iDn 2 9) D1 3.3 mm 1 3.3 mm Top View PRODUCT SUMMARY...
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6 S2 7 G2 8 S(P1/iDn 2 9) D1 3.3 mm 1 3.3 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 4 D1 3 D1 2 D1 1 G1 Bottom View CHANNEL-1 CHANNEL-2 30 30 0.0055 0.0058 0.0073 0.0077 8.4 9.2 61 a 60 a Dual FEATURES • TrenchFET® Gen IV power MOSFETs • 100 % Rg and UIS tested • Optimized Qgs/Qgs ratio improves switching characteristics • Material categorization: for definitions of compliance please see www.vishay.
SiZ200DT Datasheet
