Full PDF Text Transcription for SiZ250DT (Reference)
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www.vishay.com SiZ250DT Vishay Siliconix Dual N-Channel 60 V (D-S) MOSFETs PowerPAIR® 3 x 3S S2 5 S2 6 S2 7 G2 8 S(P1/iDn 2 9) D1 3.3 mm 1 3.3 mm Top View PRODUCT SUMMARY...
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6 S2 7 G2 8 S(P1/iDn 2 9) D1 3.3 mm 1 3.3 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration 4 D1 3 D1 2 D1 1 G1 Bottom View CHANNEL-1 CHANNEL-2 60 60 0.01220 0.01270 0.01811 0.01887 6.2 6.4 38 38 Dual FEATURES • TrenchFET® Gen IV power MOSFETs • 100 % Rg and UIS tested • Optimized Qgs/Qgs ratio improves switching characteristics • Material categorization: for definitions of compliance please see www.vishay.
SiZ250DT Datasheet
