SiZ250DT Datasheet | Vishay

FEATURES - Trench FET® Gen IV power MOSFETs - 100 % Rg and UIS tested - Optimized Qgs/Qgs ratio improves switching characteristics - Material categorization: for definitions of pliance please see .vishay./doc?99912 APPLICATIONS - CPU core power - puter / server peripherals - POL - Synchronous buck converter - Tele DC/DC D1 G1 N-Channel 1 MOSFET S1/D2 G2 N-Channel 2 MOSFET S2 ORDERING INFORMATION Package Lead (Pb)-free and halogen-free Power PAIR 3 x 3S Si Z250DT-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL CHANNEL-1 CHANNEL-2 Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current (100 μs pulse width) Continuous source drain diode current Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation Operating junction and storage temperature range Soldering remendations (peak temperature) d TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 m H TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS IDM IS IAS EAS TJ,...