V10WM100-M3 Description
V10WM100-M3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.48 V at IF = 5 A TMBS® TO-252 (D-PAK) K NC A V10WM100.
V10WM100-M3 Key Features
- Trench MOS Schottky technology
- Ideal for automated placement
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020, LF maximum peak
- Material categorization: For definitions of pliance