* Trench MOS Schottky technology
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
* Material categorization: For definitions of compli
V10WM100-M3 Datasheet (122.62 KB)
V10WM100-M3
122.62 KB
Trench mos barrier schottky rectifier.
www.vishay.com V10WM100-M3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.48 V at IF = 5 A TMBS® TO-252 (D-PAK.
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