* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for
V20120SG-E3 Datasheet (213.68 KB)
V20120SG-E3
213.68 KB
High voltage trench mos barrier schottky rectifier.
V20120SG-E3, VF20120SG-E3, VB20120SG-E3, VI20120SG-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifie.
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