V20120S-E3 Description
V20120S-E3, VF20120S-E3, VB20120S-E3, VI20120S-E3 .vishay.
V20120S-E3 Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020, LF maximum
- Material categorization: For definitions of pliance please see .vishay./doc?99912