V20120S-E3
V20120S-E3 is High Voltage Trench MOS Barrier Schottky Rectifier manufactured by Vishay.
V20120S-E3, VF20120S-E3, VB20120S-E3, VI20120S-E3
.vishay.
Vishay General Semiconductor
High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V20120S
3 2 1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
VF20120S
PIN 1
PIN 2
PIN 3
TO-262AA K
Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
- Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package)
- Material categorization: For definitions of pliance please...
