V20120SG-E3 Description
V20120SG-E3, VF20120SG-E3, VB20120SG-E3, VI20120SG-E3 .vishay. Package 20 A 120 V 150 A 0.78 V 150 °C TO-220AB, ITO-220AB, D2PAK (TO-263AB), TO-262AA Circuit configuration Single.
V20120SG-E3 Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
- Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package)
- Material categorization: for definitions of pliance please see .vishay./doc?99912