V20120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Product Overview

Vishay

Part number	V20120C
Manufacturer	Vishay
File Size	139.12 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	V20120C Datasheet
Additional preview pages of the V20120C datasheet.

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package).
Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC.

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Published: Mar 28, 2012 |