• Part: V20120S
  • Description: High-Voltage Trench MOS Barrier Schottky Rectifier
  • Manufacturer: Vishay
  • Size: 138.43 KB
Download V20120S Datasheet PDF
Vishay
V20120S
V20120S is High-Voltage Trench MOS Barrier Schottky Rectifier manufactured by Vishay.
.vishay. V20120S, VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TO-220AB TMBS ® TO-262AA 3 2 1 PIN 1 PIN 2 PIN 3 CASE 3 2 1 VI20120S PIN 1 PIN 2 PIN 3 Features - Trench MOS Schottky technology - Low forward voltage drop, low power losses - High efficiency operation - Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 - Material categorization: for definitions of pliance please see .vishay./doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY...