V20120SG
V20120SG is High-Voltage Trench MOS Barrier Schottky Rectifier manufactured by Vishay.
.vishay.
V20120SG, VI20120SG
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.54 V at IF = 5 A
TO-220AB
TMBS ®
TO-262AA
3 2 1
PIN 1
PIN 2
PIN 3
CASE
3 2 1
VI20120SG
PIN 1
PIN 2
PIN 3
Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
- Material categorization: for definitions of pliance please see .vishay./doc?99912
TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery...
