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V20120SG - High-Voltage Trench MOS Barrier Schottky Rectifier

Product Overview

Vishay

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V20120SG High-Voltage Trench MOS Barrier Schottky Rectifier by Vishay - Datasheet Preview — Datasheet preview – V20120SG

Datasheet Details

Part number	V20120SG
Manufacturer	Vishay
File Size	134.93 KB
Description	High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	V20120SG Datasheet
Additional preview pages of the V20120SG datasheet.

Product details

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Solder bath temperature 275 °C max. 10 s, per JESD 22-B106.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Published: Feb 2, 2012 |