V60100C-M3 Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Solder dip 275 °C max. 10 s, per JESD 22-B106
- Material categorization: for definitions of pliance
- Part: V60100C-M3
- Description: Dual High Voltage Trench MOS Barrier Schottky Rectifier
- Manufacturer: Vishay
- Size: 120.19 KB
Related Vishay Datasheets
| Part Number | Description |
|---|---|
| V60100P | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
| V60100PW | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
| V60120C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
| V60170G-M3 | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
| V60170PW | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |