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Vishay Intertechnology Electronic Components Datasheet

V60170PW Datasheet

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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www.vishay.com
V60170PW
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.52 V at IF = 10 A
TMBS®
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
TO-3PW
PIN 1
PIN 3
PIN 2
CASE
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 30 A
TJ max.
2 x 30 A
170 V
260 A
0.65 V
175 °C
MECHANICAL DATA
Case: TO-3PW
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Voltage rate of change (rated VR)
Operating junction and storage temperature range
IFSM
dV/dt
TJ, TSTG
V60170PW
170
60
30
260
10 000
- 40 to + 175
UNIT
V
A
A
V/μs
°C
Revision: 20-Nov-12
1 Document Number: 89944
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

V60170PW Datasheet

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

No Preview Available !

www.vishay.com
V60170PW
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage per diode
Reverse current per diode
IF = 10 A
IF = 15 A
IF = 30 A
IF = 10 A
IF = 15 A
IF = 30 A
VR = 136 V
VR = 170 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 20 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
TYP.
0.66
0.72
0.80
0.52
0.56
0.65
2.6
3.2
-
6.2
MAX.
-
-
0.93
-
-
0.73
-
-
500
60
UNIT
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
per diode
per device
RJC
V60170PW
0.9
0.6
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-3PW
V60170PW-M3/4W
4.5
PACKAGE CODE
4W
BASE QUANTITY
30/tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
32
28
24
20
16
12
8
4
0
0
25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
30.0
25.0
20.0
D = 0.5
D = 0.3
D = 0.2
D = 0.8
D = 0.1
D = 1.0
15.0
10.0
T
5.0
0.0
0
D = tp/T
tp
5 10 15 20 25 30
Average Forward Current (A)
35
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 20-Nov-12
2 Document Number: 89944
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number V60170PW
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Maker Vishay
Total Page 4 Pages
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