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V60200PG Key Features

  • Trench MOS Schottky technology
  • Low forward voltage drop, low power losses
  • High efficiency operation
  • Low thermal resistance
  • Solder dip 260 °C, 40 s
  • ponent in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

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V60200PG Description

.DataSheet.co.kr New Product V60200PG Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5.