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VB20120S-E3 Datasheet High Voltage Trench MOS Barrier Schottky Rectifier

Manufacturer: Vishay

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Datasheet Details

Part number VB20120S-E3
Manufacturer Vishay
File Size 202.44 KB
Description High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VB20120S-E3 Datasheet

Overview

V20120S-E3, VF20120S-E3, VB20120S-E3, VI20120S-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.

Key Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
  • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package).
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

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