VB20120S-E3 rectifier equivalent, high voltage trench mos barrier schottky rectifier.
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum
p.
For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and .
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