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New Product
V20120S, VF20120S, VB20120S & VI20120S
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
TMBS ®
TO-220AB ITO-220AB
FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation
2 V20120S
PIN 1 PIN 2 CASE
3 1 VF20120S
PIN 1 PIN 2
2
3
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
VB20120S Datasheet
