• Part: VB60100C-M3
  • Description: Dual High-Voltage Trench MOS Barrier Schottky Rectifier
  • Manufacturer: Vishay
  • Size: 83.93 KB
Download VB60100C-M3 Datasheet PDF
VB60100C-M3 datasheet preview
VB60100C-M3 page 2
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VB60100C-M3 page 3
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VB60100C-M3 Key Features

  • Trench MOS Schottky technology
  • Low forward voltage drop, low power losses
  • High efficiency operation
  • Low thermal resistance
  • Meets MSL level 1, per J-STD-020, LF maximum

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