VB60100C
VB60100C is Dual High Voltage Trench MOS Barrier Schottky Rectifier manufactured by Vishay.
.vishay.
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.36 V at IF = 5 A
TMBS ®
D2PAK (TO-263AB) K
2 1
PIN 1
PIN 2
HEATSINK
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
IF(AV)
2 x 30 A
VRRM
100 V
IFSM VF at IF = 30 A
TJ max. Package
320 A 0.66 V 150 °C D2PAK (TO-263AB)
Circuit configuration mon cathode
Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Low thermal resistance
- Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C
- Material categorization: for definitions...
