VB60170G-E3
VB60170G-E3 is Dual High Voltage Trench MOS Barrier Schottky Rectifier manufactured by Vishay.
.vishay.
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
TMBS ®
D2PAK (TO-263AB) K
1 VB60170G
PIN 1
PIN 2
HEATSINK
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 30 A TJ max. Package
2 x 30 A 170 V 210 A 0.72 V 175 °C
D2PAK (TO-263AB)
Circuit configuration mon cathode
Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C
- Material categorization: for definitions of pliance please see...
