VB60120C - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Low thermal resistance.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB package).
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

Vishay

Datasheet Details

Part number	VB60120C
Manufacturer	Vishay
File Size	150.11 KB
Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VB60120C Datasheet
Additional preview pages of the VB60120C datasheet.

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Full PDF Text Transcription

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www.vishay.com V60120C, VB60120C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = 5 A TO-220AB TMBS ® D2PAK (TO-263AB) K 3 2 1 V60120C PIN 1 PIN 2 PIN 3 CASE 2 1 VB60120C PIN 1 K PIN 2 HEATSINK DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. Package 2 x 30 A 120 V 300 A 0.

Published: May 4, 2020 |