VB60120C Datasheet Dual High Voltage Trench MOS Barrier Schottky Rectifier

Manufacturer: Vishay

Overview: www.vishay.com V60120C, VB60120C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = 5 A TO-220AB TMBS ® D2PAK (TO-263AB) K 3 2 1 V60120C PIN 1 PIN 2 PIN 3 CASE 2 1 VB60120C PIN 1 K PIN 2 HEATSINK DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. Package 2 x 30 A 120 V 300 A 0.

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Datasheet Details

Part number	VB60120C
Manufacturer	Vishay
File Size	150.11 KB
Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier
Download	VB60120C Download (PDF)

Key Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Low thermal resistance.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB package).
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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