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VB60170G Datasheet Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Manufacturer: Vishay

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Datasheet Details

Part number VB60170G
Manufacturer Vishay
File Size 85.82 KB
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Download VB60170G Download (PDF)

Overview

www.vishay.com VB60170G Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.

Key Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912 VB60170G PIN 1 K PIN 2.

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