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VB60100C-M3
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.36 V at IF = 5 A
TMBS ®
TO-263AB K
2 1
FEATURES
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C • Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
VB60100C
PIN 1
K
PIN 2
HEATSINK
TYPICAL APPLICATIONS
For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection.
PRIMARY CHARACTERISTICS
Package
TO-263AB
IF(AV) VRRM IFSM VF at IF = 30 A TJ max.
VB60100C-M3 Datasheet
