VB60100C Datasheet Dual High Voltage Trench MOS Barrier Schottky Rectifier

Manufacturer: Vishay

VB60100C dual high voltage trench mos barrier schottky rectifier by Vishay - Datasheet Preview

Datasheet Details

Part number	VB60100C
Manufacturer	Vishay
File Size	98.55 KB
Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier
Download	VB60100C Download (PDF)

Overview

www.vishay.com VB60100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A TMBS ® D2PAK (TO-263AB) K 2 1 VB60100C PIN 1 K PIN 2 HEATSINK DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) 2 x 30 A VRRM 100 V IFSM VF at IF = 30 A TJ max.

Package 320 A 0.

Key Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Low thermal resistance.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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