VBT30L60C - Dual Trench MOS Barrier Schottky Rectifier

Vishay

Datasheet Details

Part number	VBT30L60C
Manufacturer	Vishay
File Size	96.89 KB
Description	Dual Trench MOS Barrier Schottky Rectifier
Datasheet	VBT30L60C_Vishay.pdf

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C Available.
Not recommended for PCB bottom side wave mounting.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Published: Feb 2, 2012 |