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VBT30L60C - Dual Trench MOS Barrier Schottky Rectifier

Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C Available.
  • Not recommended for PCB bottom side wave mounting.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number VBT30L60C
Manufacturer Vishay
File Size 96.89 KB
Description Dual Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VBT30L60C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com VBT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A TMBS ® D2PAK (TO-263AB) K 2 1 VBT30L60C PIN 1 K PIN 2 HEATSINK DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A VRRM 60 V IFSM 200 A VF at IF = 15 A 0.45 V TJ max. Package Circuit configuration 150 °C D2PAK (TO-263AB) Common cathode FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C Available • Not recommended for PCB bottom side wave mounting • Material categorization: for definitions of compliance please see www.vishay.
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