* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C Available
* Not recommended for PCB bottom side wave mounting
* Material cate
VBT30L60C Datasheet (96.89 KB)
VBT30L60C
96.89 KB
Dual trench mos barrier schottky rectifier.
www.vishay.com VBT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A TMBS ® D2PAK (.
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