VFT3060G - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Datasheet Details

Part number	VFT3060G
Manufacturer	Vishay
File Size	151.76 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VFT3060G_Vishay.pdf

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Not recommended for PCB bottom side wave mounting.
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package).
Material categorization: For definitions of compliance please see www. vishay. com/doc?99.

📁 VFT3060G Similar Datasheet

VFT30-28 - VHF POWER MOSFET (Advanced Semiconductor)
VFT30-50 - VHF POWER MOSFET N-Channel Enhancement Mode (Advanced Semiconductor)
VFT300-28 - VHF POWER MOSFET Silicon N-Channel Enhancement Mode (Advanced Semiconductor)
VFT300-50 - VHF POWER MOSFET N-Channel Enhancement Mode (Advanced Semiconductor)
VFT3045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VFT1045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VFT15-12 - VHF POWER MOSFET N-Channel Enhancement Mode (Advanced Semiconductor)
VFT15-28 - VHF POWER MOSFET N-Channel Enhancement Mode (Advanced Semiconductor)

Other Datasheets by Vishay

Published: Feb 2, 2012 |