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VFT30L60C - Dual Trench MOS Barrier Schottky Rectifier

Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Solder dip 275 °C max. 10 s, per JESD 22-B106.
  • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 1 2 3 VFT30L60C PIN 1 PIN 3 PIN 2.

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Datasheet Details

Part number VFT30L60C
Manufacturer Vishay
File Size 136.63 KB
Description Dual Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VFT30L60C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr New Product VFT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A TMBS ® ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 1 2 3 VFT30L60C PIN 1 PIN 3 PIN 2 TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max. 2 x 15 A 60 V 200 A 0.
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