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VFT30L60C Key Features

  • Trench MOS Schottky technology
  • Low forward voltage drop, low power losses
  • High efficiency operation
  • Solder dip 275 °C max. 10 s, per JESD 22-B106
  • pliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC

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VFT30L60C Description

.DataSheet.co.kr New Product VFT30L60C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A TMBS ® ITO-220AB.

VFT30L60C Applications

  • RoHS pliant, and mercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: