Datasheet Summary
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Vishay Semiconductors
650 V Power SiC Gen 3 Merged PIN Schottky Diode, 10 A
Base cathode 2
1 3
TO-220AC 2L
1 Cathode
3 Anode
LINKS TO ADDITIONAL RESOURCES
3D 3D
3D Models
Application Notes
PRIMARY CHARACTERISTICS
IF(AV) VR VF at IF at 150 °C TJ max. IR at VR at 175 °C QC (VR = 400 V) Package
10 A 650 V 1.46 V 175 °C 4.5 μA 29 nC TO-220AC 2L
Circuit configuration
Single
Features
- Majority carrier diode using Schottky technology on SiC wide band gap material
- Improved VF and efficiency by thin wafer technology
- Positive VF temperature coefficient for easy paralleling
- Virtually no recovery tail and no switching losses
- Temperature...