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VS-3C10ET07T-M3 Datasheet - Vishay

650V Power SiC Gen 3 Merged PIN Schottky Diode

VS-3C10ET07T-M3 Features

* Majority carrier diode using Schottky technology on SiC wide band gap material

* Improved VF and efficiency by thin wafer technology

* Positive VF temperature coefficient for easy paralleling

* Virtually no recovery tail and no switching losses

* Temperature

VS-3C10ET07T-M3 General Description

/ APPLICATIONS Wide band gap SiC based 650 V Schottky diode, designed for high performance and ruggedness. Optimum choice for high speed hard switching and efficient operation over a wide temperature range, it is also recommended for all applications suffering from Silicon ultrafast recovery behavio.

VS-3C10ET07T-M3 Datasheet (141.90 KB)

Preview of VS-3C10ET07T-M3 PDF

Datasheet Details

Part number:

VS-3C10ET07T-M3

Manufacturer:

Vishay ↗

File Size:

141.90 KB

Description:

650v power sic gen 3 merged pin schottky diode.
www.vishay.com VS-3C10ET07T-M3 Vishay Semiconductors 650 V Power SiC Gen 3 Merged PIN Schottky Diode, 10 A Base cathode 2 2 1 3 TO-220AC 2L 1 Ca.

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VS-3C10ET07T-M3 650V Power SiC Gen Merged PIN Schottky Diode Vishay

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