| Description | / APPLICATIONS Wide band gap SiC based 650 V Schottky diode, designed for high performance and ruggedness. Optimum choice for high speed hard switching and efficient operation over a wide temperature range, it is also recommended for all applications suffering from Silicon ultrafast recovery behavior. Typical applications include AC/DC PFC and DC/DC ultra high frequency output rectification in FBP... |
| Features |
• Majority carrier diode using Schottky technology on SiC wide band gap material • Improved VF and efficiency by thin wafer technology • Positive VF temperature coefficient for easy paralleling • Virtually no recovery tail and no switching losses • Temperature invariant switching behavior • 175 °C maximum operating junction temperature • Meets MSL ... |
| Datasheet |
 VS-3C12ET07S2L-M3 Datasheet 182.41KB |
