VS-3C12ET07S2L-M3
VS-3C12ET07S2L-M3 is 650V Gen 3 Power SiC Merged PIN Schottky Diode manufactured by Vishay.
.vishay.
Vishay Semiconductors
650 V Gen 3 Power SiC Merged PIN Schottky Diode, 12 A
Base cathode
D2PAK 2L (TO-263AB 2L)
1 N/C
3 Anode
LINKS TO ADDITIONAL RESOURCES
3D 3D
3D Models
Application Notes
PRIMARY CHARACTERISTICS
IF(AV) VR VF at IF at 25 °C,typ. TJ max. IR at VR at 175 °C QC (VR = 400 V) Package
12 A 650 V 1.3 V 175 °C 5 μA 34 nC D2PAK 2L (TO-263AB 2L)
Circuit configuration
Single
Features
- Majority carrier diode using Schottky technology on SiC wide band gap material
- Improved VF and efficiency by thin wafer technology
- Positive VF temperature coefficient for easy paralleling
- Virtually no recovery tail and no switching losses
-...
