VS-3C12ET07S2L-M3 diode equivalent, 650v gen 3 power sic merged pin schottky diode.
* Majority carrier diode using Schottky technology on SiC wide band gap material
* Improved VF and efficiency by thin wafer technology
* Positive VF temperatu.
Wide band gap SiC based 650 V Schottky diode, designed for high performance and ruggedness. Optimum choice for high spee.
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