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VS-GB100TP120U Datasheet Molding Type Module IGBT

Manufacturer: Vishay

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General Description

Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness.

It is designed for applications such as general inverters and UPS.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Collector to emitter voltage VCES Gate to emitter voltage VGES Collector current TC = 25 °C IC TC = 80 °C Pulsed collector current ICM (1) tp = 1 ms Diode continuous forward current IF Diode maximum forward current IFM Maximum power dissipation PD TJ = 150 °C Short circuit withstand time tSC TJ = 125 °C RMS isolation voltage VISOL f = 50 Hz, t = 1 min I2t-value, diode I2t VR = 0 V, t = 10 ms, TJ = 125 °C Note (1) Repetitive rating: Pulse width limited by maximum junction temperature.

Overview

www.vishay.com VS-GB100TP120U Vishay Semiconductors Molding Type Module IGBT, 2 in 1 Package, 1200 V, 100 A.

Key Features

  • 10 μs short circuit capability.
  • VCE(on) with positive temperature coefficient.
  • Rugged with ultrafast performance.
  • Square RBSOA.
  • Low inductance case.
  • Fast and soft reverse recovery antiparallel FWD.
  • Isolated copper baseplate using DCB (Direct Copper Bonding) technology.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

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