SI2333CDS Datasheet | Vishay

FEATURES - Trench FET® power MOSFET - Material categorization: for definitions of pliance please see .vishay./doc?99912 2 S Marking code: O3 1 G Top View APPLICATIONS - Load switch - PA switch Available PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = -4.5 V RDS(on) max. (Ω) at VGS = -2.5 V RDS(on) max. (Ω) at VGS = -1.8 V Qg typ. (n C) ID (A) a Configuration -12 0.035 0.045 0.059 9 -5.1 Single D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and halogen-free SOT-23 (TO-236) Si2333CDS-T1-E3 Si2333CDS-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous source-drain diode current TC = 25 °C TA = 25 °C TC = 25 °C Maximum power dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating junction and storage temperature range VDS VGS ID IDM IS PD TJ, Tstg LIMIT -12 ±8 -7.1 -5.7 -5.1 b, c -4.0 b, c -20 -1.0 -0.63 b, c 2.5 1.6 1.25 b, c 0.8 b, c -55 to +150 UNIT...