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SiHF9Z24 Datasheet Power MOSFET

Manufacturer: Vishay

General Description

G S G D D P-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Overview

IRF9Z24, SiHF9Z24 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration www.DataSheet4U.com VGS = - 10 V 19 5.

Key Features

  • - 60 0.28.
  • Dynamic dV/dt Rating.
  • Repetitive Avalanche Rated.
  • P-Channel.
  • 175 °C Operating Temperature.
  • Fast Switching.
  • Ease of Paralleling.
  • Simple Drive Requirements.
  • Lead (Pb)-free Available Available RoHS.