SiHF9Z22 Datasheet | Vishay

FEATURES - 50 0.33 - - - - - - - P-Channel Versatility pact Plastic Package Fast Switching Low Drive Current Ease of Paralleling Excellent Temperature Stability Lead (Pb)-free Available Available Ro HS- PLIANT TO-220 DESCRIPTION The Power MOSFET technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance bined with high transconductance and extreme device ruggedness. The P-Channel Power MOSFET’s are designed for application which require the convenience of reverse polarity operation. They retain all of the features of the more mon N-Channel Power MOSFET’s such as voltage control, very fast switching, ease of paralleling, and excellent temperature stability. P-Channel Power MOSFETs are intended for use in power stages where plementary symmetry with N-Channel devices offers circuit simplification. They are also very useful in drive stages because of the circuit versatility offered by the reverse polarity connection. Applications include motor control, audio amplifiers, switched mode converters, control circuits and pulse amplifiers. S G D D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free Sn Pb TO-220 IRF9Z22Pb F Si HF9Z22-E3 IRF9Z22 Si HF9Z22 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Drain-Gate Voltage (RGS = 20 KΩ) Continuous Drain Current VGS at - 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS VGDR ID LIMIT - 50 ± 20 - 50 - 8.9 - 5.6 - 36 0.32 - 36 - 2.2 40 - 55 to + 150 300d UNIT V A W/°C A A W °C IDM Pulsed Drain Currenta Linear Derating Factor Inductive Current, Clamped L = 100 µH ILM Unclamped Inductive Current (Avalanche Current) IL PD Maximum Power Dissipation TC = 25 °C Operating Junction and Storage Temperature Range TJ, Tstg Soldering Remendations (Peak Temperature) for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction...